At R.P.I., he was the recipient of the IBM Fellowship in 1972 and the Allen B. His thesis work involved Gallium Arsenide diffusion mechanisms and pioneering work on the growth of InAs and GaInAs layers using Organometallic CVD techniques. degrees from Rensselaer Polytechnic Institute, Troy, NY, in 19, respectively. He was the recipient of the Philips India Medal and the Special Merit Medal (as Valedictorian) at I.I.T, Madras. Professor Baliga obtained his Bachelor of Technology degree in 1969 from the Indian Institute of Technology, Madras, India. It will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical and design engineers, as well as an important publication for semiconductor specialists. This book is the first available on the applications of the IGBT. The book presents recent applications in plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage, but it is also used in all renewable energy generation systems, including solar and wind power. The IGBT device has proven to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasoline powered motor vehicles and energy-saving compact fluorescent light bulbs.

The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor, Second Edition provides the essential information needed by applications engineers to design new products using the device in sectors including consumer, industrial, lighting, transportation, medical and renewable energy.

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